cystech electronics corp. spec. no. : c098h8 issued date : 2016.04.18 revised date : 2016.04.27 page no. : 1/10 MTA3D0N01H8 cystek product specification n-channel logic level enhancement mode power mosfet MTA3D0N01H8 bv dss 14v i d @ t c =25 c, v gs =4.5v 44.5a i d @ t a =25 c, v gs =4.5v 15.4a v gs =10v, i d =20a 2.9m v gs =4.5v, i d =20a 3.7m r dson(typ) v gs =2.5v, i d =20a 6.2m features ? single drive requirement ? low on-resistance ? fast switching characteristic ? pb-free lead plating and halogen-free package equivalent circuit outline MTA3D0N01H8 dfn5 6 pin 1 ordering information device package shipping MTA3D0N01H8-0-t6-g dfn5 6 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel g gate d drain ssource environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t6 : 3000 pcs / tape & reel,13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c098h8 issued date : 2016.04.18 revised date : 2016.04.27 page no. : 2/10 MTA3D0N01H8 cystek product specification absolute maximum ratings (ta=25 c, unless otherwise specified) parameter symbol limits unit drain-source voltage v ds 14 gate-source voltage v gs 10 v continuous drain current @ v gs =4.5v, t c =25 c 44.5 continuous drain current @ v gs =4.5, t c =100c i d 28.1 continuous drain current @ v gs =10v, t a =25 c 15.4 continuous drain current @ v gs =10v, t a =70 c i dsm 12.3 pulsed drain current i dm 248 *1 avalanche current @ l=0.1mh i as 40 a avalanche energy @ l=2mh, i d =15a, v dd =10v e as 225 *3 mj t c =25 21 t c =100 p d 8.4 t a =25 2.5 *2 total power dissipation t a =70 p dsm 1.6 *2 w operating junction and storage temp erature range tj, tstg -55~+150 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 6 thermal resistance, junction-to-ambient, max r th,j-a 50 *2 c/w note : 1. pulse width limited by maximum junction temperature. 2. surface mounted on a 1 in2 pad of 2oz copper, t 10s. in practice r th,j-a will be determined by customer?s pcb characteristics. 3.100% tested by condition of l=0.1mh, i as =20a, v gs =10v, v dd =10v. characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 14 - - v gs =0v, i d =250 a v gs(th) 0.3 - 1.3 v v ds = v gs , i d =250 a g fs *1 - 40 - s v ds =5v, i d =20a i gss - - 100 na v gs = 10v - - 1 v ds =12v, v gs =0v i dss - - 5 a v ds =12v, v gs =0v, tj=55 c - 2.9 3.8 v gs =10v, i d =20a - 3.7 5.3 v gs =4.5v, i d =20a r ds(on) *1 - 6.2 9.3 m v gs =2.5v, i d =20a dynamic ciss - 1130 - coss - 433 - crss - 255 - pf v ds =10v, v gs =0v, f=1mhz qg *1, 2 10 14 18.6 qgs *1, 2 - 1.3 - qgd *1, 2 - 6.3 - nc v ds =10v, v gs =4.5v, i d =20a
cystech electronics corp. spec. no. : c098h8 issued date : 2016.04.18 revised date : 2016.04.27 page no. : 3/10 MTA3D0N01H8 cystek product specification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions t d(on) *1, 2 - 12.4 18.6 tr *1, 2 - 22.2 33.3 t d(off) *1, 2 - 39.4 59.1 t f *1, 2 - 23.6 35.4 ns v ds =10v, i d =20a, v gs =4.5v, r gs =2.7 rg 1.3 2.7 4 f=1mhz source-drain diode i s *1 - - 20 a v sd *1 - 0.83 1.2 v i s =20a, v gs =0v trr - 17 - ns qrr - 4.6 - nc i f =20a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature
cystech electronics corp. spec. no. : c098h8 issued date : 2016.04.18 revised date : 2016.04.27 page no. : 4/10 MTA3D0N01H8 cystek product specification recommended soldering footprint & stencil design unit : mm
cystech electronics corp. spec. no. : c098h8 issued date : 2016.04.18 revised date : 2016.04.27 page no. : 5/10 MTA3D0N01H8 cystek product specification typical characteristics typical output characteristics 0 20 40 60 80 100 120 140 160 180 200 0246810 v ds , drain-source voltage(v) i d , drain current(a) 3v 2.5 v 4v v gs =1.5v 10v , 9v,8v,7v,6v,5v 2v brekdown voltage vs ambient temperature 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =3v v gs =4.5v v gs =2.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 02468101214161820 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =20a r dson @tj=25c : 2.9m typ. v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =20a v gs =4.5v, i d =20a r dson @tj=25c : 3.7m typ.
cystech electronics corp. spec. no. : c098h8 issued date : 2016.04.18 revised date : 2016.04.27 page no. : 6/10 MTA3D0N01H8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 100 1000 10000 012345678910 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 4 8 12 16 20 24 28 32 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =20a v ds =10v maximum safe operating area 0.1 1 10 100 1000 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s 1s r ds( on) limited t a =25c, tj=150c, v gs =4.5v r ja =50c/w, single pulse maximum drain current vs junction temperature 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 tj, junctione temperature(c) i d , maximum drain current(a) t a =25c, tj=150c, v gs =4.5v r ja =50c/w, single pulse
cystech electronics corp. spec. no. : c098h8 issued date : 2016.04.18 revised date : 2016.04.27 page no. : 7/10 MTA3D0N01H8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 20 40 60 80 100 120 140 160 180 200 012345 v gs , gate-source voltage(v) i d , drain current (a) v ds =5v single pulse power rating, junction to ambient (note on page 2) 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j(max) =150c t a =25c r ja =50c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effectivetransient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =50 c/w
cystech electronics corp. spec. no. : c098h8 issued date : 2016.04.18 revised date : 2016.04.27 page no. : 8/10 MTA3D0N01H8 cystek product specification reel dimension carrier tape dimension pin #1
cystech electronics corp. spec. no. : c098h8 issued date : 2016.04.18 revised date : 2016.04.27 page no. : 9/10 MTA3D0N01H8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c098h8 issued date : 2016.04.18 revised date : 2016.04.27 page no. : 10/10 MTA3D0N01H8 cystek product specification dfn5 6 dimension millimeters inches 8-lead dfn5 6 plastic package cys package code : h8 date code device n ame a 3d0 n 0 1 marking : millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.000 0.035 0.039 k 1.190 1.390 0.047 0.055 a3 0.254 ref 0.010 ref b 0.350 0.450 0.014 0.018 d 4.944 5.096 0.195 0.201 e 1.270 typ. 0.050 typ. e 5.974 6.126 0.235 0.241 l 0.559 0.711 0.022 0.028 d1 3.910 4.110 0.154 0.162 l1 0.424 0.576 0.017 0.023 e1 3.375 3.575 0.133 0.141 h 0.574 0.726 0.023 0.029 d2 4.824 4.976 0.190 0.196 10 12 10 12 e2 5.674 5.826 0.223 0.229 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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